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ZXMP3A16DN8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-30
-1.0
-1.0
100
V
A
nA
V
I D =-250 μ A, V GS =0V
V DS =-30V, V GS =0V
V GS = 20V, V DS =0V
I =-250 A,
D
V DS = V GS
Static Drain-Source On-State Resistance (1) R DS(on)
0.045
0.070
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
Forward Transconductance (1)(3)
g fs
9.2
S
V DS =-15V,I D =-4.2A
DYNAMIC
(3)
Input Capacitance
C iss
1022
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
267
229
pF
pF
V DS =-15 V, V GS =0V,
f=1MHz
SWITCHING
(2) (3)
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
6.5
37.1
21.4
17.2
29.6
2.8
8.6
ns
ns
ns
nC
nC
nC
nC
V DD =-15V, I D =-1A
R G =6.0 Ω , V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.85
-0.95
V
T J =25°C, I S =-3.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
t rr
Q rr
21.7
16.1
ns
nC
T J =25°C, I F =-2A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2007
4
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